苏州源展材料科技

产品名称:CpZr(NMe2)3

CAS号: 33271-88-4

分子式:C11H23N3Zr

分子量:288

外观:

稳定性:

Recent Research

Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited  atomic layer deposition using cyclopentadienyl-based precursors without annealing.

Leakage current control of Y-HfO2 for dynamic random access memory applications via ZrO2 stacking

Stabilization of the tetragonal phase in ZrO2 thin films according to ozone concentration using atomic layer deposition


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